cmpta96 surface mount extremely high voltage pnp silicon transistor description: the central semiconductor cmpta96 type is a surface mount epoxy molded pnp silicon planar epitaxial transistor designed for extremely high voltage applications. marking code: c96 sot-23 case maximum ratings: (t a =25c) symbol units collector-base voltage v cbo 450 v collector-emitter voltage v ceo 450 v emitter-base voltage v ebo 6.0 v continuous collector current i c 500 ma power dissipation p d 350 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 357 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min typ max units i cbo v cb =400v 100 na i ebo v be =4.0v 100 na bv cbo i c =100a 450 500 v bv ceo i c =1.0ma 450 490 v bv ebo i e =10a 6.0 9.7 v v ce(sat) i c =1.0ma, i b =0.1ma 0.20 v v ce(sat) i c =10ma, i b =1.0ma 0.30 v v ce(sat) i c =50ma, i b =5.0ma 0.15 0.50 v v be(sat) i c =10ma, i b =1.0ma 1.0 v h fe v ce =10v, i c =1.0ma 40 h fe v ce =10v, i c =10ma 50 120 200 h fe v ce =10v, i c =50ma 45 h fe v ce =10v, i c =100ma 25 35 f t v ce =10v, i c =10ma, f=10mhz 20 mhz c ob v cb =20v, i e =0, f=1.0mhz 7.0 pf c ib v eb =0.5v, i c =0, f=1.0mhz 130 pf r3 (3-february 2010) www.centralsemi.com
cmpta96 surface mount extremely high voltage pnp silicon transistor lead code: 1) base 2) emitter 3) collector marking code: c96 sot-23 case - mechanical outline www.centralsemi.com r3 (3-february 2010)
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